Thin epitaxial Si films as a passivation method for...

Materials Science in Semiconductor Processing 2006 Vol. 9; Iss. 4-5

Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

F.E. Leys, R. Bonzom, B. Kaczer, T. Janssens, W. Vandervorst, B. De Jaeger, J. Van Steenbergen, K. Martens, D. Hellin, J. Rip, G. Dilliway, A. Delabie, P. Zimmerman, M. Houssa, A. Theuwis, R. Loo, M.
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Volume:
9
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.mssp.2006.08.034
File:
PDF, 378 KB
english, 2006
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