On temperature coefficient of resistance of boron-doped...

Materials Science in Semiconductor Processing 2007 Vol. 10; Iss. 4-5

On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering

Emil V. Jelenkovic, Milan M. Jevtic, K.Y. Tong, G.K.H. Pang, W.Y. Cheung, Shrawan K. Jha
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Volume:
10
Year:
2007
Language:
english
Pages:
7
DOI:
10.1016/j.mssp.2007.08.001
File:
PDF, 401 KB
english, 2007
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