Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3...

Materials Science in Semiconductor Processing 2008 Vol. 11; Iss. 5-6

Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

V.V. Afanas’ev, A. Stesmans, A. Delabie, F. Bellenger, M. Houssa, R.R. Lieten, C. Merckling, J. Penaud, D.P. Brunco, M. Meuris
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
11
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.mssp.2008.09.004
File:
PDF, 394 KB
english, 2008
Conversion to is in progress
Conversion to is failed