[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Impact of GaN channel scaling in InAlN/GaN HEMTs
Lee, Dong Seup, Bin Lu,, Azize, Mohamad, Gao, Xiang, Guo, Shiping, Kopp, David, Fay, Patrick, Palacios, TomasYear:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131583
File:
PDF, 293 KB
english, 2011