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[Inst. Electr. Eng. Japan 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 - Osaka, Japan (4-7 June 2001)] Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216) - 1.8 kV, 3.8 A bipolar junction transistors in 4H-SiC
Sei-Hyung Ryu,, Agarwal, A.K., Palmour, J.W., Levinshtein, M.E.Year:
2001
Language:
english
DOI:
10.1109/ispsd.2001.934554
File:
PDF, 301 KB
english, 2001