Comparison of Si, Sapphire, SiC, and GaN Substrates for...

ECS Transactions 2013 / 03 Vol. 50; Iss. 3

Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy

Leszczynski, M., Prystawko, P., Plesiewicz, J., Dmowski, L., Litwin-Staszewska, E., Grzanka, S., Grzanka, E., Roccaforte, F.
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Volume:
50
Language:
english
Journal:
ECS Transactions
DOI:
10.1149/05003.0163ecst
Date:
March, 2013
File:
PDF, 233 KB
english, 2013
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