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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT
Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, MYear:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724576
File:
PDF, 317 KB
english, 2013