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[IRE 1967 International Electron Devices Meeting - ()] 1967 International Electron Devices Meeting - A quantitative theory of 1/f type noise due to interface states in thermally oxidized silicon
Nicollian, E.H., Melchior, H.Year:
1967
Language:
english
DOI:
10.1109/iedm.1967.187862
File:
PDF, 98 KB
english, 1967