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3.3–3.4-$\mu{\rm m}$ Diode Lasers Based on Triple-Layer GaInAsSb Quantum Wells
Liang, Rui, Kipshidze, Gela, Hosoda, Takashi, Shterengas, Leon, Belenky, GregoryVolume:
26
Language:
english
Journal:
IEEE Photonics Technology Letters
DOI:
10.1109/lpt.2014.2302835
Date:
April, 2014
File:
PDF, 481 KB
english, 2014