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[IEEE 9th International Symposium on Power Semiconductor Devices and IC's - Weimar, Germany (26-29 May 1997)] Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's - High reliability UMOSFET with oxide-nitride complex gate structure
Baba, Y., Matuda, N., Yawata, S., Izumi, S., Kawamura, N., Kawakami, T.Year:
1997
Language:
english
DOI:
10.1109/ispsd.1997.601520
File:
PDF, 372 KB
english, 1997