Static Analysis of Random Telegraph Noise in a 45-nm...

IEEE Transactions on Nanotechnology 2011 / 11 Vol. 10; Iss. 6

Static Analysis of Random Telegraph Noise in a 45-nm Channel Length Conventional MOSFET Device: Threshold Voltage and ON-Current Fluctuations

Ashraf, Nabil, Vasileska, Dragica
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Volume:
10
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/tnano.2011.2148726
Date:
November, 2011
File:
PDF, 588 KB
english, 2011
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