Impact of FinFET and III–V/Ge Technology on Logic and...

IEEE Transactions on Device and Materials Reliability 2014 / 03 Vol. 14; Iss. 1

Impact of FinFET and III–V/Ge Technology on Logic and Memory Cell Behavior

Amat, E., Calomarde, A., Almudever, C. G., Aymerich, N., Canal, R., Rubio, Antonio
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Volume:
14
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2013.2291410
Date:
March, 2014
File:
PDF, 1.21 MB
english, 2014
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