Study of Initial Growth Layer of GaSb on Si(111) by...

Japanese Journal of Applied Physics 2011 / 8 Vol. 50; Iss. 8

Study of Initial Growth Layer of GaSb on Si(111) by Scanning Tunneling Microscopy

Hara, Shinsuke, Fuse, Kazuhiro, Machida, Ryuto, Yagishita, Kazuki, Irokawa, Katsumi, Miki, Hirofumi, Kawazu, Akira, Fujishiro, Hiroki I.
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.08LB03
Date:
August, 2011
File:
PDF, 1019 KB
english, 2011
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