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[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Effect of STI shape and tunneling oxide thinning on cell VTH variation in the flash memory
JaiDong Lee,, JungHwan Kim,, Woong Lee,, SangHoon Lee,, HunYoung Lim,, JaeDuk Lee,, SeokWoo Nam,, HyeonDeok Lee,, Chang L. Yong,Year:
2005
Language:
english
DOI:
10.1109/relphy.2005.1493197
File:
PDF, 319 KB
english, 2005