[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - Enhancement-mode GaN Hybrid MOS-HEMTs with Ron,sp of 20 m¿-cm2
Huang, W., Li, Z., Chow, T. P., Niiyama, Y., Nomura, T., Yoshida, S.Year:
2008
Language:
english
DOI:
10.1109/ISPSD.2008.4538957
File:
PDF, 301 KB
english, 2008