Resistive Switching in $\hbox{HfO}_{2}$ Probed by a...

IEEE Electron Device Letters 2012 / 01 Vol. 33; Iss. 1

Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor

Yalon, E., Gavrilov, A., Cohen, S., Mistele, D., Meyler, B., Salzman, J., Ritter, D.
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Volume:
33
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2011.2171317
Date:
January, 2012
File:
PDF, 421 KB
english, 2012
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