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[IEEE 2013 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2013.10.13-2013.10.17)] 2013 IEEE International Integrated Reliability Workshop Final Report - Effects of gate stress evaluated using low frequency noise measurements in GaN on Si HEMTs
Masuda, Michael, Derickson, Dennis, Weatherford, Todd, Porter, MatthewYear:
2013
Language:
english
DOI:
10.1109/iirw.2013.6804174
File:
PDF, 3.56 MB
english, 2013