A model for TID effects on floating Gate Memory cells

IEEE Transactions on Nuclear Science 2004 / 12 Vol. 51; Iss. 6

A model for TID effects on floating Gate Memory cells

Cellere, G., Paccagnella, A., Visconti, A., Bonanomi, M., Caprara, P., Lora, S.
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Volume:
51
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2004.839243
Date:
December, 2004
File:
PDF, 286 KB
english, 2004
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