Influence of Transfer Gate Design and Bias on the Radiation...

IEEE Transactions on Nuclear Science 2014 / 12 Vol. 61; Iss. 6

Influence of Transfer Gate Design and Bias on the Radiation Hardness of Pinned Photodiode CMOS Image Sensors

Goiffon, Vincent, Estribeau, Magali, Cervantes, Paola, Molina, Romain, Gaillardin, Marc, Magnan, Pierre
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2014.2360773
Date:
December, 2014
File:
PDF, 2.29 MB
english, 2014
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