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[IEEE 2008 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, China (2008.12.8-2008.12.10)] 2008 IEEE International Conference on Electron Devices and Solid-State Circuits - Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology
Wan-Cheng Tsai,, Chao-Hung Chen,, Hsien-Chin Chiu,, Fu, Jeffrey S.Year:
2008
Language:
english
DOI:
10.1109/edssc.2008.4760647
File:
PDF, 488 KB
english, 2008