Different dependence of band-to-band and Fowler-Nordheim...

IEEE Electron Device Letters 1996 / 11 Vol. 17; Iss. 11

Different dependence of band-to-band and Fowler-Nordheim tunneling on source doping concentration of an n-MOSFET

Yuan Tang,, Jian Chen,, Chi Chang,, Liu, D., Haddad, S., Yu Sun,, Wang, A., Ramskey, M., Ming Kwong,, Kinoshita, H., Wei-Han Chan,, Jih Lien,
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Volume:
17
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.541769
Date:
November, 1996
File:
PDF, 260 KB
english, 1996
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