Analytic description of short-channel effects in...

IEEE Electron Device Letters 2000 / 09 Vol. 21; Iss. 9

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang-Hyun Oh,, Monroe, D., Hergenrother, J.M.
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Volume:
21
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.863106
Date:
September, 2000
File:
PDF, 101 KB
english, 2000
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