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[IEEE International Reliability Physics Symposium - Dallas, TX, USA (30 March-4 April 2003)] 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. - On the degradation of p-MOSFETs in analog and RF circuits under inhomogeneous negative bias temperature stress
Schlunder, C., Brederlow, R., Ankele, B., Lill, A., Goser, K., Thewes, R.Year:
2003
Language:
english
DOI:
10.1109/relphy.2003.1197712
File:
PDF, 347 KB
english, 2003