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[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - Study of selective gate recess etching of InGaAs/InAlAs/InGaAs metamorphic HEMT structures using succinic acid based etchant
Mahadeva Bhat, K., Sai Saravanan, G., Vyas, H. P., Muralidharan, R., Dhamodaran, S., Jain, Mahaveer K., Subrahmanyam, A.Year:
2007
Language:
english
DOI:
10.1109/iwpsd.2007.4472552
File:
PDF, 371 KB
english, 2007