[IEEE 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop - Monterey, CA, USA (Feb 12-16 2006)] 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop - Extending endurance of NROM memories to over 10 million program/erase cycles
Roizin, Y., Pikhay, E., Lisiansky, M., Heiman, A., Alon, E., Aloni, E., Fenigstein, A.Year:
2006
Language:
english
DOI:
10.1109/.2006.1629501
File:
PDF, 183 KB
english, 2006