100-ns electronically variable semiconductor memory using...

IEEE Journal of Solid-State Circuits 1970 / 10 Vol. 5; Iss. 5

100-ns electronically variable semiconductor memory using two diodes per memory cell

Waaben, S., Waggener, H.A.
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Volume:
5
Language:
english
Journal:
IEEE Journal of Solid-State Circuits
DOI:
10.1109/jssc.1970.1050112
Date:
October, 1970
File:
PDF, 759 KB
english, 1970
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