[IEEE Proceedings of the IEEE 2006 International Interconnect Technology Conference - Burlingame, CA (2006.06.5-2006.06.7)] 2006 International Interconnect Technology Conference - Advanced Preclean for Integration of PECVD SiOCH (k=2.5) Dielectrics with Copper Metallization Beyond 45nm Technology
Fu, X., Forster, J., Yu, J., Gopalraja, P., Bhatnagar, A., Ahn, S., Demos, A., Ho, P.Year:
2006
Language:
english
DOI:
10.1109/iitc.2006.1648644
File:
PDF, 425 KB
english, 2006