[IEEE 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Nashville, TN, USA (6-9 Nov. 1988)] 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Stable and metastable (Al,Ga)As/(In,Ga)As n-channel strained quantum well field-effect transistors
Zipperian, T.E., Jones, E.D., Dodson, B.W., Klem, J.F., Gourley, P.L.Year:
1988
DOI:
10.1109/gaas.1988.11069
File:
PDF, 288 KB
1988