[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Circuit model for power LDMOS including quasi-saturation

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