[IEEE IEEE InternationalElectron Devices Meeting, 2005....

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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - 45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

Yu, S., Lu, J.-P., Mehrad, F., Bu, H., Shanware, A., Ramin, M., Pas, M., Visokay, M.R., Vitale, S., Yang, S.-H., Jiang, P., Hall, L., Montgomery, C., Obeng, Y., Bowen, C., Hong, H., Tran, J., Chapman,
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Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609312
File:
PDF, 510 KB
english, 2005
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