[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Work-function engineering in gate first technology for multi-VT dual-gate FDSOI CMOS on UTBOX
Weber, O., Andrieu, F., Mazurier, J., Casse, M., Garros, X., Leroux, C., Martin, F., Perreau, P., Fenouillet-Beranger, C., Barnola, S., Gassilloud, R., Arvet, C., Thomas, O., Noel, J-P., Rozeau, O., JYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703289
File:
PDF, 2.35 MB
english, 2010