[IEEE IVESC 2004. The 5th International Vacuum Electron Sources - Beijing, China (6-10 Sept. 2004)] IVESC 2004. The 5th International Vacuum Electron Sources Conference Proceedings (IEEE Cat. No.04EX839) - High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD

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