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[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - 8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS
Witters, L., Takeoka, S., Yamaguchi, S., Hikavyy, A., Shamiryan, D., Cho, M., Chiarella, T., Ragnarsson, L.-A., Loo, R., Kerner, C., Crabbe, Y., Franco, J., Tseng, J., Wang, W.E., Rohr, E., Schram, T.Year:
2010
Language:
english
DOI:
10.1109/vlsit.2010.5556219
File:
PDF, 480 KB
english, 2010