[IEEE 2006 IEEE International Symposium on Power...

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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - High Temperature Characterization of 41-SiC Normally-On Vertical JFETs with Buried Gate and Buried Field Rings

Mihaila, A., Udrea, F., Rashid, S.J., Godignon, P., Brosselard, P., Tournier, D., Millan, J., Amaratunga, G.
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Year:
2006
Language:
english
DOI:
10.1109/ispsd.2006.1666096
File:
PDF, 3.11 MB
english, 2006
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