Temperature characterization of deep and shallow defect...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2004 Vol. 517; Iss. 1-3

Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

Claudio Arnaboldi, Andrea Fascilla, Mark W. Lund, Gianluigi Pessina
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Volume:
517
Year:
2004
Language:
english
Pages:
24
DOI:
10.1016/j.nima.2003.09.034
File:
PDF, 807 KB
english, 2004
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