RF Performance Improvement of Metamorphic High-Electron...

IEEE Electron Device Letters 2010 / 07 Vol. 31; Iss. 7

RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications

Chien-I Kuo,, Heng-Tung Hsu,, Yu-Lin Chen,, Chien-Ying Wu,, Chang, Edward Yi, Miyamoto, Yasuyuki, Wen-Chung Tsern,, Sahoo, Kartik Chandra
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Volume:
31
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2010.2048995
Date:
July, 2010
File:
PDF, 448 KB
english, 2010
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