[IEEE 2009 IEEE Nanotechnology Materials and Devices Conference (NMDC) - Traverse City, MI, USA (2009.06.2-2009.06.5)] 2009 IEEE Nanotechnology Materials and Devices Conference - High pressure hydrogen annealing effect of CESL nitride stressor MOSFETs with metal gate/high-k dielectric on the performance and reliability
Park, Min Sang, Lee, Kyong Taek, Hong, Seung Ho, Song, Seung Hyun, Choi, Gil Bok, Baek, Rock Hyun, Choi, Hyun Sik, Sagong, Hyun Chul, Jung, Sung Woo, Kang, Chang Yong, Woo, B., Jeong, Yoon-HaYear:
2009
Language:
english
DOI:
10.1109/nmdc.2009.5167527
File:
PDF, 440 KB
english, 2009