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[IEEE 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual - San Diego, CA, USA (23-25 March 1999)] 1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) - Channel length dependence of hot-carrier degradation of LATID-n-MOSFETs under analog operation
Thewes, R., Walter, G.H., Brederlow, R., Schlunder, C., von Schwerin, A., Jurk, R., Linnenbank, C.G., Lengauer, G., Schmitt-Landsiedel, D., Weber, W.Year:
1999
Language:
english
DOI:
10.1109/relphy.1999.761618
File:
PDF, 600 KB
english, 1999