Microscopic parameters of materials containing GaN/AlN and...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2005 Vol. 543; Iss. 1

Microscopic parameters of materials containing GaN/AlN and InAs/AlAs heterostructures

S.B. Erenburg, N.V. Bausk, L.N. Mazalov, A.I. Toropov, K.S. Zhuravlev, V.G. Mansurov, T.S. Shamirsaev, W. Bras, S. Nikitenko
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Volume:
543
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.nima.2005.01.169
File:
PDF, 215 KB
english, 2005
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