Characterization of as-grown and heavily irradiated GaN...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2005 Vol. 546; Iss. 1-2

Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

E. Gaubas, S. Juršėnas, R. Tomašiūnas, J. Vaitkus, A. Žukauskas, A. Blue, M. Rahman, K.M. Smith
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Volume:
546
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.nima.2005.03.107
File:
PDF, 377 KB
english, 2005
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