Defect attributed variations of the photoconductivity and...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2005 Vol. 552; Iss. 1-2

Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

E. Gaubas, P. Pobedinskas, J. Vaitkus, A. Uleckas, A. Žukauskas, A. Blue, M. Rahman, K.M. Smith, E. Aujol, B. Beaumont, J.-P. Faurie, P. Gibart
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Volume:
552
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.nima.2005.06.011
File:
PDF, 252 KB
english, 2005
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