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[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Scalability of advanced partially depleted n-MOSFET devices on biaxial strained SOI substrates
Flachowsky, S., Hontschel, J., Wei, A., Illgen, R., Hermann, P., Herrmann, T., Klix, W., Stenzel, R., Ramirez, A., Horstmann, M., Kernevez, N., Cayrefourcq, I., Metral, F., Kennard, M., Guiot, E.Year:
2009
Language:
english
DOI:
10.1109/ulis.2009.4897562
File:
PDF, 886 KB
english, 2009