[IEEE 2008 IEEE International Reliability Physics Symposium (IRPS) - Phoenix, AZ, USA (2008.04.27-2008.05.1)] 2008 IEEE International Reliability Physics Symposium - A novel characterization method to monitor process damage for transistors
Soichiro Kitazaki,, Yoshinori Kumura,, Susumu Shuto,, Tohru Ozaki,, Takeshi Hamamoto,, Akihiro Nitayama,Year:
2008
Language:
english
DOI:
10.1109/relphy.2008.4559005
File:
PDF, 189 KB
english, 2008