DLTS measurements of radiation induced defects in epitaxial...

DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors

F. Hönniger, E. Fretwurst, G. Lindström, G. Kramberger, I. Pintilie, R. Röder
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Volume:
583
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.nima.2007.08.202
File:
PDF, 245 KB
english, 2007
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