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[IEEE 52nd Annual Device Research Conference - Boulder, CO (June 20-22, 1994)] 52nd Annual Device Research Conference - Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications
Khan, M.A., Kuznia, J.N., Olson, D.T., Schaff, W.J., Burm, J.W., Shur, M.S.Year:
1994
Language:
english
DOI:
10.1109/drc.1994.1009451
File:
PDF, 90 KB
english, 1994