[IEEE 2013 IEEE International Electron Devices Meeting...

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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Techniques towards GaN power transistors with improved high voltage dynamic switching properties

Wurfl, J., Hilt, O., Bahat-Treidel, E., Zhytnytska, R., Kotara, P., Brunner, F., Krueger, O., Weyers, M.
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Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724571
File:
PDF, 742 KB
english, 2013
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