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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study
Kobinata, Kyosuke, Nakayama, TakashiYear:
2011
Language:
english
DOI:
10.1109/sispad.2011.6035027
File:
PDF, 664 KB
english, 2011