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[IEEE 2009 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2009.04.27-2009.04.29)] 2009 International Symposium on VLSI Technology, Systems, and Applications - Influence of gate misalignment on the electrical characteristics of MuGFETs
Lee, Chi-Woo, Afzalian, Aryan, Yan, Ran, Dehdashti, Nima, Xiong, Weize, Colinge, Jean-PierreYear:
2009
Language:
english
DOI:
10.1109/vtsa.2009.5159322
File:
PDF, 262 KB
english, 2009