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[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - 180kVA Three Phase SiCGT Inverter Utilizing Novel VF Degradation Reduction Phenomena for SiC Devices
Sugawara, Y., Miyanagi, Y., Nakayama, K., Asano, K., Ogata, S., Okada, S., Izumi, T., Tanaka, A.Year:
2007
Language:
english
DOI:
10.1109/ispsd.2007.4294985
File:
PDF, 2.39 MB
english, 2007