Implantation and annealing of aluminum in 4H silicon...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2005 Vol. 237; Iss. 1-2

Implantation and annealing of aluminum in 4H silicon carbide

M. Rambach, F. Schmid, M. Krieger, L. Frey, A.J. Bauer, G. Pensl, H. Ryssel
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Volume:
237
Year:
2005
Language:
english
Pages:
4
DOI:
10.1016/j.nimb.2005.04.079
File:
PDF, 229 KB
english, 2005
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